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  1. product pro?le 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PMZ250UN n-channel trenchmos extremely low level fet rev. 01 21 february 2008 product data sheet bottom view n pro?le 55 % lower than sot23 n footprint 90 % smaller than sot23 n lower on-state resistance n low threshold voltage n leadless package n fast switching n driver circuits n load switching in portable appliances n dc-to-dc converters n v ds 20 v n i d 2.28 a n r dson 300 m w n p tot 2.50 w table 1. pinning pin description simpli?ed outline symbol 1 gate (g) sot883 (sc-101) 2 source (s) 3 drain (d) 3 1 2 transparent top view s d g mbb076
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 2 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 3. ordering information 4. limiting values table 2. ordering information type number package name description version PMZ250UN sc-101 leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm sot883 caution this device is sensitive to electrostatic discharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage 25 c t j 150 c - 20 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w -20v v gs gate-source voltage - 8v i d drain current t sp =25 c; v gs = 4.5 v; see figure 2 and 3 - 2.28 a t sp = 100 c; v gs = 4.5 v; see figure 2 - 1.44 a i dm peak drain current t sp =25 c; pulsed; t p 10 m s; see figure 3 - 4.56 a p tot total power dissipation t sp =25 c; see figure 1 - 2.50 w t stg storage temperature - - 55 +150 c t j junction temperature - - 55 +150 c source-drain diode i s source current t sp =25 c - 2.28 a i sm peak source current t sp =25 c; pulsed; t p 10 m s - 4.56 a electrostatic discharge v esd electrostatic discharge voltage all pins - human body model; c = 100pf; r = 1.5 k w -60v machine model; c = 200 pf - 30 v
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 3 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet fig 1. normalized total power dissipation as a function of solder point temperature fig 2. normalized continuous drain current as a function of solder point temperature t sp =25 c; i dm is single pulse fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage t sp ( c) 0 200 150 50 100 003aac031 40 80 120 p der (%) 0 t sp ( c) 0 200 150 50 100 003aac033 40 80 120 i der ( %) 0 p der p tot p tot 25 c () ----------------------- - 100 % = i der i d i d25 c () -------------------- 100 % = 003aac202 1 10 - 1 10 10 2 i d (a) 10 - 2 v ds (v) 10 - 1 10 2 10 1 limit r dson = v ds / i d dc t p = 10 m s 100 m s 100 ms 1 ms 10 ms
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 4 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 5. thermal characteristics [1] mounted on a printed-circuit board; vertical in still air. table 4. thermal characteristics symbol parameter conditions min typ max unit r th(j-sp) thermal resistance from junction to solder point see figure 4 --50k/w r th(j-a) thermal resistance from junction to ambient minimum footprint [1] - 670 - k/w fig 4. transient thermal impedance from junction to solder point as a function of pulse duration 003aab831 1 10 10 2 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-sp) (k/w) single pulse d = 0.5 0.2 0.1 0.05 0.02 t p t p t t p t d =
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 5 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 6. characteristics table 5. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =10 m a; v gs =0v t j =25 c 20--v t j = - 55 c 18--v v gs(th) gate-source threshold voltage i d = 0.25 ma; v ds =v gs ; see figure 9 and 10 t j =25 c 0.45 0.7 0.95 v t j = 150 c 0.25 - - v t j = - 55 c - - 1.15 v i dss drain leakage current v ds =20v; v gs =0v t j =25 c --1 m a t j = 150 c - - 100 m a i gss gate leakage current v gs = 8 v; v ds = 0 v - 10 100 na r dson drain-source on-state resistance v gs = 4.5 v; i d = 0.2 a; see figure 6 and 8 t j =25 c - 250 300 m w t j = 150 c - 400 480 m w v gs = 2.5 v; i d = 0.1 a; see figure 6 and 8 - 320 400 m w v gs = 1.8 v; i d = 0.075 a; see figure 6 and 8 - 420 600 m w dynamic characteristics q g(tot) total gate charge i d = 1 a; v ds = 10 v; v gs = 4.5 v; see figure 11 and 12 - 0.89 - nc q gs gate-source charge - 0.13 - nc q gd gate-drain charge - 0.18 - nc c iss input capacitance v gs =0v; v ds = 20 v; f = 1 mhz; see figure 14 -45-pf c oss output capacitance - 11 - pf c rss reverse transfer capacitance - 7 - pf t d(on) turn-on delay time v ds =10v; r l =10 w ; v gs = 4.5 v; r g =6 w - 4.5 - ns t r rise time -10-ns t d(off) turn-off delay time - 18.5 - ns t f fall time -5-ns source-drain diode v sd source-drain voltage i s = 0.3 a; v gs = 0 v; see figure 13 - 0.80 1.2 v
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 6 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet t j =25 ct j =25 c fig 5. output characteristics: drain current as a function of drain-source voltage; typical values fig 6. drain-source on-state resistance as a function of drain current; typical values t j =25 c and 150 c; v ds >i d r dson fig 7. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 8. normalized drain-source on-state resistance factor as a function of junction temperature v ds (v) 02 1.5 0.5 1 03an02 1 1.5 0.5 2 2.5 i d (a) 0 4.5 2.5 3 2 1.8 v gs (v) = 1.5 i d (a) 0 2.5 2 1 1.5 0.5 03an03 0.4 0.6 0.2 0.8 1 r dson ( w ) 0 v gs (v) = 1.8 2 2.5 4.5 3 v gs (v) 04 3 12 03an04 1 1.5 0.5 2 2.5 i d (a) 0 25 c t j = 150 c t j ( c) - 60 180 120 060 003aac024 1.0 0.5 1.5 2.0 a 0 a r dson r dson 25 c () ----------------------------- - =
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 7 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet i d = 0.25 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature fig 10. sub-threshold drain current as a function of gate-source voltage i d = 1 a; v ds =10v fig 11. gate-source voltage as a function of gate charge; typical values fig 12. gate charge waveform de?nitions t j ( c) - 60 180 120 060 03aj65 0.6 0.3 0.9 1.2 v gs(th) (v) 0 max min typ 03am43 v gs (v) 0 1.2 0.8 0.4 10 - 4 10 - 5 10 - 3 i d (a) 10 - 6 min typ max q g (nc) 01 0.8 0.4 0.6 0.2 03an07 2 3 1 4 5 v gs (v) 0 i d = 1 a t j = 25 c v ds = 10 v 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl)
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 8 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet t j =25 c and 150 c; v gs =0v v gs = 0 v; f = 1 mhz fig 13. source current as a function of source-drain voltage; typical values fig 14. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values v sd (v) 01 0.8 0.4 0.6 0.2 03an97 0.4 0.6 0.2 0.8 1 i s (a) 0 150 c t j = 25 c v gs = 0 v 03an06 v ds (v) 10 - 1 10 2 10 1 10 10 2 c (pf) 1 c iss c oss c rss
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 9 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 7. package outline fig 15. package outline sot833 (sc-101) unit a 1 max. a (1) bb 1 e 1 ell 1 references outline version european projection issue date iec jedec jeita mm 0.50 0.46 0.20 0.12 0.55 0.47 0.03 0.62 0.55 0.35 0.65 dimensions (mm are the original dimensions) note 1. including plating thickness 0.30 0.22 0.30 0.22 sot883 sc-101 03-02-05 03-04-03 de 1.02 0.95 l e 2 3 1 b b 1 a 1 a d l 1 0 0.5 1 mm scale leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm sot883 e e 1
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 10 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 8. soldering dimensions in mm fig 16. re?ow soldering footprint for sot883 mbl873 1.30 0.30 r = 0.05 (12 ) r = 0.05 (12 ) 0.60 0.70 0.80 solder lands solder resist occupied area solder paste 0.90 0.30 (2 ) 0.35 (2 ) 0.20 0.40 (2 ) 0.50 (2 ) 0.25 (2 ) 0.30 0.40 0.50
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 11 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 9. revision history table 6. revision history document id release date data sheet status change notice supersedes PMZ250UN_1 20080221 product data sheet - -
PMZ250UN_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 21 february 2008 12 of 13 nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 10.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 10.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. trenchmos is a trademark of nxp b.v. 11. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PMZ250UN n-channel trenchmos extremely low level fet ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 21 february 2008 document identifier: PMZ250UN_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 12. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 10.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 contact information. . . . . . . . . . . . . . . . . . . . . 12 12 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13


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